THE ROLE OF GALLIUM ANTISITE DEFECT IN ACTIVATION AND TYPE-CONVERSION IN SI IMPLANTED GAAS

被引：22

作者：

HIRAMOTO, T

MOCHIZUKI, Y

SAITO, T

IKOMA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 12期

关键词：

D O I：

10.1143/JJAP.24.L921

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：L921 / L924

页数：4

相关论文

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