ARSENIC VACANCY FORMATION IN GAAS ANNEALED IN HYDROGEN GAS-FLOW

被引：25

作者：

ITOH, T ^{[1
]}

TAKEUCHI, M ^{[1
]}

机构：

[1] WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷 / 02期

关键词：

D O I：

10.1143/JJAP.16.227

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：227 / 232

页数：6

共 17 条

[1] VACANCY ASSOCIATION OF DEFECTS IN ANNEALED GAAS
CHANG, LL
ESAKI, L
TSU, R
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (05) : 143 - &
[2] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS
CHIANG, SY
PEARSON, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2986 - 2991
[3] OPTICAL PROPERTIES OF N-TYPE GAAS .2. FORMATION OF EFFICIENT HOLE TRAPS DURING ANNEALING IN TE-DOPED GAAS
HWANG, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4584 - &
[4] APPARATUS WITH A MICROPROCESSOR FOR PHOTOLUMINESCENCE SPECTRA CORRECTION AND PROCESSING
ITOH, T
TAKEUCHI, M
SUZUKI, S
ENAMI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (07) : 1281 - 1286
[5] PHOTOLUMINESCENCE STUDIES IN IRRADIATED SI-DOPED GALLIUM-ARSENIDE
JEONG, M
SHIRAFUJI, J
INUISHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (01) : 109 - 119
[6] EXTRINSIC ELECTROABSORPTION IN HIGH-RESISTIVITY GAAS
JONATH, AD
VORONKOV, E
BUBE, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1754 - 1766
[7] ELECTRICAL AND OPTICAL PROPERTIES OF N-TYPE SI-COMPENSATED GAAS PREPARED BY LIQUID-PHASE EPITAXY
KRESSEL, H
NELSON, H
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3720 - &
[8] LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY
KRESSEL, H
DUNSE, JU
NELSON, H
HAWRYLO, FZ
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) : 2006 - &
[9] ACTIVATION-ENERGIES OF FORMATION AND DIFFUSION OF AS VACANCY IN GAAS MEASURED BY PHOTOLUMINESCENCE
LIN, MS
GAMO, K
MASUDA, K
NAMBA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (11) : 1839 - 1840
[10] SI-DOPED AND GE-DOPED GAAS P-N JUNCTIONS
MORIIZUMI, T
TAKAHASHI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (03) : 348 - +

← 1 2 →