AL0.25IN0.75P/AL0.48IN0.52AS/GA0.35IN0.65AS GRADED CHANNEL PSEUDOMORPHIC HEMTS WITH HIGH CHANNEL-BREAKDOWN VOLTAGE

被引：27

作者：

CHOUGH, KB

CANEAU, C

HONG, WP

SONG, JI

机构：

[1] Bellcore, Red Bank

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 01期

关键词：

D O I：

10.1109/55.289470

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new Al0.25ln0.75P/Al0.48In0.52As/Ga0.35In0.65As pseudomorphic HEMT where the InAs mole fraction of the Ga1-xInxAs channel was graded (x = 0.53 --> 0.65 --> 0.53) is described. The modification of the quantum well channel significantly improved breakdown characteristics. In addition, use of an Al0.25In0.75P Schottky layer increased the Schottky barrier height. Devices having 0.5 mum gate-length showed g(m) of 520 mS/mm and I(max) of 700 mA/mm. The gate-drain (BV(g-d)) and source-drain (BV(d-s)) breakdown voltages were as high as -14 and 13 V, respectively. An f(T) of 70 GHz and f(max) of 90 GHz were obtained.

引用

页码：33 / 35

页数：3

共 9 条

[1] COMPARISON OF DEVICE PERFORMANCE OF HIGHLY STRAINED GA1-XINXAS/AL0.48IN0.52AS (0.53-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.90) MODFETS [J].