COMPARISON OF DEVICE PERFORMANCE OF HIGHLY STRAINED GA1-XINXAS/AL0.48IN0.52AS (0.53-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.90) MODFETS

被引：23

作者：

CHOUGH, KB

CHANG, TY

FEUER, MD

LALEVIC, B

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

[2] RUTGERS STATE UNIV,DEPT ELECT ENGN,PISCATAWAY,NJ 08854

[3] RUTGERS STATE UNIV,DEPT ELECT & COMP ENGN,PISCATAWAY,NJ 08854

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 03期

关键词：

FIELD-EFFECT TRANSISTORS; TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19920204

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A series of 1.3-mu-m gate length Ga1-xIn(x)As/Al0.4KIn0.52As MODFETs covering a wide range of x values in the channel (0.53 less-than-or-equal-to x less-than-or-equal-to 0.90 with strain compensation for x greater-than-or-equal-to 0.77) has been successfully fabricated and compared. Although the maximum values of transconductance (1010 mS/mm), saturated drain current density (920 mA/mm), and room-temperature mobility are obtained with x = 0.85, lower x values of 0.77-0.80 are found to offer the highest 77K mobility and the best cutoff-frequency-gate-length product.

引用

页码：329 / 330

页数：2

共 5 条

[1] ACHIEVEMENT OF EXCEPTIONALLY HIGH MOBILITIES IN MODULATION-DOPED GA1-XINXAS ON INP USING A STRESS COMPENSATED STRUCTURE [J].