CHARACTERIZATION OF GRADED INTERFACE INXGA1-XAS/IN0.52AL0.48AS (0.53-LESS-THAN-X-LESS-THAN-0.70) STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：23

作者：

PENG, CK

SINHA, S

MORKOC, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 07期

关键词：

D O I：

10.1063/1.339397

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2880 / 2884

页数：5

共 25 条

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