DOPING EFFECTS AND COMPOSITIONAL GRADING IN AL GA1-AS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：31

作者：

CHAND, N

MORKOC, H

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 06期

关键词：

D O I：

10.1109/T-ED.1985.22075

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1064 / 1069

页数：6

共 22 条

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[7] BERYLLIUM AND SILICON DOPING STUDIES IN ALXGA1-XAS AND NEW RESULTS ON PERSISTENT PHOTOCONDUCTIVITY [J].

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[8] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J].

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