ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL ELECTRON-GAS IN PSEUDOMORPHIC INXGA1-XAS/N-IN0.52AL0.48AS HETEROSTRUCTURES

被引：17

作者：

SASA, S

NAKATA, Y

SUGIYAMA, Y

FUJII, T

MIYAUCHI, E

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(89)90379-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：189 / 192

页数：4

共 10 条

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[3] CURRENT-GAIN CUTOFF FREQUENCY COMPARISON OF INGAAS HEMTS
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[4] HONG WP, 1986, IEEE ELECTR DEVICE L, V7, P480, DOI 10.1109/EDL.1986.26446
[5] ENHANCEMENT IN EXCITONIC ABSORPTION DUE TO OVERLAP IN HEAVY-HOLE AND LIGHT-HOLE EXCITONS IN GAAS/INALGAAS QUANTUM-WELL STRUCTURES
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[J]. APPLIED PHYSICS LETTERS, 1987, 51 (14) : 1091 - 1093
[6] EXTREMELY HIGH 2DEG CONCENTRATION IN SELECTIVELY DOPED IN0.53GA0.47AS N-IN0.53AL0.48AS HETEROSTRUCTURES GROWN BY MBE
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (01): : L59 - L61
[7] LARGE VALENCE-BAND NONPARABOLICITY AND TAILORABLE HOLE MASSES IN STRAINED-LAYER SUPERLATTICES
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FRITZ, IJ
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (12) : 731 - 733
[8] SASA S, 1988, I PHYS C SER, V91, P585
[9] SASAKI H, 1987, APPL PHYS LETT, V51, P1934
[10] LIGHT-HOLE CONDUCTION IN INGAAS/GAAS STRAINED-LAYER SUPERLATTICES
SCHIRBER, JE
FRITZ, IJ
DAWSON, LR
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (02) : 187 - 189