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HIGH-PERFORMANCE LARGE-AREA INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS

被引：10
作者：
HIERONYMI, F
BOTTCHER, EH
DROGE, E
KUHL, D
BIMBERG, D
机构：
[1] Institut für Festkorperphysik I der, Technischen Universität Berlin
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 08期
关键词：
D O I：
10.1109/68.238251
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the fabrication and characteristics of high-performance large-area InP:Fe/InGaAs:Fe/InP:Fe metal-semiconductor-metal (MSM) photodetectors. With a 350-mum X 350-mum large active area, the detectors offer the excellent feature of 900-MHz electrical bandwidth and 1.7-pF capacitance at 10-V bias. The respective dark current density is 20 pA/mum2, and the CW responsivity is 0.4 A/W at 1.3-mum wavelength. The detectors are therefore ideally suited for applications in the long-wavelength range that require a large detection area and, at the same time, a high bandwidth and a low capacitance.
引用
收藏
页码：910 / 913
页数：4
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