VERY HIGH-SPEED METAL-SEMICONDUCTOR METAL INGAAS-FE PHOTODETECTORS WITH INP-FE BARRIER ENHANCEMENT LAYER GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

The fabrication of long-wavelength metal-semiconductormetal photodetectors using an InGaAs : Fe photoactive layer and an InP: Fe barrier enhancement layer is reported. An internal quantum efficiency of 100% and a dark current of 250 nA at 5 V bias is achieved. High-speed performance is studied as a function of contact spacing, showing an impulse response of less than 18ps. Microwave s11-parameter measurements are used to determine the values of the parasitic elements due to device structure and packaging. The resulting 3dB cutoff frequency of up to 75 GHz demonstrates that almost transit time limited high-speed operation is obtained. © 1990, The Institution of Electrical Engineers. All rights reserved.