High performance ZnSe photoconductors

被引：7

作者：

Huang, ZC

Wie, CR

Na, I

Luo, H

Mott, DB

Shu, PK

机构：

[1] SUNY BUFFALO,DEPT ELECT & COMP ENGN,AMHERST,NY 14260

[2] SUNY BUFFALO,DEPT PHYS,AMHERST,NY 14260

[3] NASA,GODDARD SPACE FLIGHT CTR,GREENBELT,MD 20771

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 16期

关键词：

metal-semiconductor-metal structures; photodetectors; II-VI semiconductors;

D O I：

10.1049/el:19960971

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-quality metal-semiconductor-metal photoconductive detector has been fabricated on semi-insulating ZnSe grown by molecular beam epitaxy. The detector has a responsivity of 320 A/W at 480nm under an applied bias of 10V, and a response time of 2.3ms.

引用

页码：1507 / 1509

页数：3

共 6 条

[1] PHOTOCONDUCTIVITY IN ZNSE UNDER HIGH ELECTRIC-FIELDS [J].