MPCVD diamond deposition on porous silicon pretreated with the bias method

被引：22

作者：

Raiko, V ^{[1
]}

Spitzl, R ^{[1
]}

Engemann, J ^{[1
]}

Borisenko, V ^{[1
]}

Bondarenko, V ^{[1
]}

机构：

[1] BELARUSSIAN STATE UNIV INFORMAT & RADIOELECT, MINSK 220600, BELARUS

来源：

关键词：

CVD diamond; porous silicon; stress; nucleation and growth;

D O I：

10.1016/0925-9635(96)00514-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Plasma-assisted CVD diamond growth on bias-pretreated porous silicon has been investigated. It was found by micro-Raman spectroscopy and cathodoluminescence that diamond films on porous silicon exhibit less stress compared to those on monocrystalline silicon. Depending on the parameters of the porous silicon layer, it is possible to influence or even to control the stress in diamond films. A nucleation enhancement of CVD diamond by several orders of magnitude was found on porous silicon. Oriented growth of diamond films on silicon with a porous surface with a high degree of orientation and good crystalline quality is demonstrated.

引用

页码：1063 / 1069

页数：7

共 9 条

[1] BORISENKO VE, 1990, 11 EUR C SURF SCI EC, P251
[2] CATHODOLUMINESCENCE STUDIES OF SINTERED DIAMOND
COLLINS, AT
ROBERTSON, SH
[J]. JOURNAL OF MATERIALS SCIENCE LETTERS, 1985, 4 (06) : 681 - 684
[3] HEIDERHOFF R, 1994, P SOC PHOTO-OPT INS, V2151, P59, DOI 10.1117/12.171766
[4] MOLECULAR-BEAM EPITAXIAL-GROWTH OF COSI2 ON POROUS SI
KAO, YC
WANG, KL
WU, BJ
LIN, TL
NIEH, CW
JAMIESON, D
BAI, G
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (22) : 1809 - 1811
[5] LESNIKOVA VP, 1990, P 7 INT C MICR NAUK, V2, P213
[6] GROWTH AND CHARACTERIZATION OF MOLECULAR-BEAM EPITAXIAL GAAS-LAYERS ON POROUS SILICON
LIN, TL
SADWICK, L
WANG, KL
KAO, YC
HULL, R
NIEH, CW
JAMIESON, DN
LIU, JK
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (11) : 814 - 816
[7] NEW APPROACH TO THE HIGH-QUALITY EPITAXIAL-GROWTH OF LATTICE-MISMATCHED MATERIALS
LURYI, S
SUHIR, E
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (03) : 140 - 142
[8] TROYANOVA GN, 1994, I INT S IDAM FILMS I, P72
[9] VANDERVEEN JF, 1988, STRUCTURE SURFACE, V2, P378

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