MOLECULAR-BEAM EPITAXIAL-GROWTH OF COSI2 ON POROUS SI

被引：21

作者：

KAO, YC ^{[1
]}

WANG, KL ^{[1
]}

WU, BJ ^{[1
]}

LIN, TL ^{[1
]}

NIEH, CW ^{[1
]}

JAMIESON, D ^{[1
]}

BAI, G ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 22期

关键词：

D O I：

10.1063/1.98530

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1809 / 1811

页数：3

共 8 条

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APPLIED PHYSICS LETTERS, 1987, 51 (01) :45-47

[2]

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[3] UNIFORMITY AND CRYSTALLINE QUALITY OF COSI2/SI HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY AND REACTIVE DEPOSITION EPITAXY [J].

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[4] 100-MUM-WIDE SILICON-ON-INSULATOR STRUCTURES BY SI MOLECULAR-BEAM EPITAXY GROWTH ON POROUS SILICON [J].

LIN, TL ;

CHEN, SC ;

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WANG, KL ;

IYER, S .

APPLIED PHYSICS LETTERS, 1986, 48 (26) :1793-1795

[5] NEW APPROACH TO THE HIGH-QUALITY EPITAXIAL-GROWTH OF LATTICE-MISMATCHED MATERIALS [J].

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APPLIED PHYSICS LETTERS, 1986, 49 (03) :140-142

[6] ETCHING OF SIO2-FILMS BY SI IN ULTRAHIGH-VACUUM [J].

TABE, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (03) :534-538

[7] EPITAXIAL SILICIDES [J].

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GIBSON, JM ;

JACOBSON, DC .

THIN SOLID FILMS, 1982, 93 (1-2) :77-90

[8] AN INVESTIGATION ON SURFACE CONDITIONS FOR SI MOLECULAR-BEAM EPITAXIAL (MBE) GROWTH [J].

XIE, YH ;

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KAO, YC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :1035-1039

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