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UNIFORMITY AND CRYSTALLINE QUALITY OF COSI2/SI HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY AND REACTIVE DEPOSITION EPITAXY

被引：33
作者：
KAO, YC
TEJWANI, M
XIE, YH
LIN, TL
WANG, KL
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期
关键词：
D O I：
10.1116/1.583143
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：596 / 599
页数：4
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[2]   STUDY OF THE UNIFORMITY AND STOICHIOMETRY OF COSI2 FILMS USING RUTHERFORD BACKSCATTERING SPECTROSCOPY AND SCANNING ELECTRON-MICROSCOPY [J].
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[6]   DOUBLE HETEROEPITAXY IN THE SI (111)-COSI2-SI STRUCTURE [J].
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APPLIED PHYSICS LETTERS, 1980, 37 (02) :203-205
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