Stability of HF-etched Si(100) surfaces in oxygen ambient

被引：82

作者：

Zhang, X

Garfunkel, E

Chabal, YJ

Christman, SB

Chaban, EE

机构：

[1] Rutgers State Univ, Dept Chem, Piscataway, NJ 08854 USA

[2] Agere Syst, Mat Res, Murray Hill, NJ 07974 USA

[3] Lucent Technol, Murray Hill, NJ 07974 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 24期

关键词：

D O I：

10.1063/1.1425461

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In situ multiple internal reflection infrared absorption spectroscopy of H-passivated silicon surfaces in controlled oxygen environments reveals that direct oxygen incorporation into the surface Si-Si bonds occurs without surface hydrogen removal, in the temperature range of 550-590 K for 1-20 mTorr O-2 pressures. The kinetics of the O-2 insertion process display overall effective activation energies of 1.6 to 1.7 eV and prefactors controlled primarily by Si-H steric hindrance for O-2 to access Si-Si backbonds. (C) 2001 American Institute of Physics.

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页码：4051 / 4053

页数：3

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