Initial oxidation processes of H-terminated Si(100) surfaces analyzed using a random sequential adsorption model

被引：8

作者：

Ikeda, H

Nakagawa, Y

Zaima, S

Ishibashi, Y

Yasuda, Y

机构：

[1] Nagoya Univ, Grad Sch Engn, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Ctr Cooperat Res Adv Sci & Technol, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[3] Nagoya Univ, Grad Sch Engn, Dept Appl Phys, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1999年 / 38卷 / 6A期

关键词：

initial oxidation process; H-terminated Si(100) surface; random sequential adsorption model; HREELS; sticking probability;

D O I：

10.1143/JJAP.38.3422

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have applied a random sequential adsorption (RSA) model to the experimental results of the adsorption of O atom's on a H-terminated Si(100) surface and discussed the initial oxidation processes on H-terminated Si(100)-1 x 1 surfaces. The RSA model can reproduce the experimental results obtained by high-resolution electron energy loss spectroscopy (HREELS) and clearly indicates that O atoms preferentially adsorb on one of two back-bond sites of a surface Si atom. In addition, it is also indicated that the adsorption of O atoms on Si-Si bonds between the second- and third-layer Si atoms from the surface hardly occurs until all back-bond sites of surface Si atoms are occupied by O atoms.

引用

页码：3422 / 3425

页数：4

共 15 条

[1] QUASIEQUILIBRIUM TREATMENT OF GAS-SOLID REACTIONS .I. EVAPORATION RATES OF VOLATILE SPECIES FORMED IN REACTION OF O2 WITH W, MO, AND C [J].