InAsSbP-InAsSb-InAs diode lasers emitting at 3.2 mu m grown by metal-organic chemical vapor deposition

被引：22

作者：

Wu, D

Kaas, E

Diaz, J

Lane, B

Rybaltowski, A

Yi, HJ

Razeghi, M

机构：

[1] Center for Quantum Devices, Dept. of Elec. Eng. and Comp. Sci., Northwestern University, Evanston

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 02期

关键词：

high power; InAs; midwave-infrared lasers; MOCVD;

D O I：

10.1109/68.553081

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InAsSb-InAsSbP double heterostructure diode lasers have been grown by metal-organic chemical vapor deposition on (100) InAs substrates. High-output powers of 660 mW in pulse mode and 300 mW in continuous wave operation with 400-mu m cavity length and 100-mu m-wide aperture at 78 K have been obtained, These devices showed low threshold current density of 40 A/cm(2), low internal loss of 3.0 cm(-1), far-field theta(perpendicular to) of 34 degrees with differential efficiency of 90% at 78 K, and high operating temperatures of 220 K.

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页码：173 / 175

页数：3

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