Electroluminescence of MOS capacitors with Si-implanted SiO2

Electroluminescence (EL) characteristics of n(+)-polysilicon MOS capacitors with 50 nm Si-implanted SiO2 were measured. The EL intensity is almost proportional to the gate current, and the EL efficiency is about 50-70 times larger than that of a MOS capacitor without Si-implantation. Although the EL spectra of MOS capacitors have a broad peak around 650 nm regardless of the Si-implantation, only the EL intensity of Si-implanted MOS capacitors increases gradually below 500 nm. The latter may be caused by radiative electron capture into two kinds of SiO2 trap levels, 2.0-2.5 and 3.0 eV below the conduction band of SiO2. (C) 1997 Elsevier Science Ltd.