Terahertz Response and Colossal Kerr Rotation from the Surface States of the Topological Insulator Bi2Se3

被引:202
作者
Aguilar, R. Valdes [1 ,2 ]
Stier, A. V. [1 ,2 ,3 ]
Liu, W. [1 ,2 ]
Bilbro, L. S. [1 ,2 ]
George, D. K. [3 ]
Bansal, N. [4 ]
Wu, L. [1 ,2 ]
Cerne, J. [3 ]
Markelz, A. G. [3 ]
Oh, S. [4 ]
Armitage, N. P. [1 ,2 ]
机构
[1] Johns Hopkins Univ, Inst Quantum Matter, Baltimore, MD 21218 USA
[2] Johns Hopkins Univ, Dept Phys & Astron, Baltimore, MD 21218 USA
[3] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA
[4] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
基金
美国国家科学基金会;
关键词
BI2TE3;
D O I
10.1103/PhysRevLett.108.087403
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report the THz response of thin films of the topological insulator Bi2Se3. At low frequencies, transport is essentially thickness independent showing the dominant contribution of the surface electrons. Despite their extended exposure to ambient conditions, these surfaces exhibit robust properties including narrow, almost thickness-independent Drude peaks, and an unprecedentedly large polarization rotation of linearly polarized light reflected in an applied magnetic field. This Kerr rotation can be as large as 65 degrees and can be explained by a cyclotron resonance effect of the surface states.
引用
收藏
页数:5
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