Effect of thickness on optoelectrical properties of Mo-doped indium oxide films

被引：25

作者：

Gupta, R. K. ^{[1
]}

Ghosh, K. ^{[1
]}

Patel, R. ^{[2
]}

Kahol, P. K. ^{[1
]}

机构：

[1] SW Missouri State Univ, Dept Phys Astron & Mat Sci, Springfield, MO 65897 USA

[2] SW Missouri State Univ, Roy Blunt Jordan Valley Innovat Ctr, Springfield, MO 65806 USA

来源：

APPLIED SURFACE SCIENCE | 2008年 / 255卷 / 05期

关键词：

Semiconductor; Electrical properties; Thin films; Indium oxide; Optical materials and properties;

D O I：

10.1016/j.apsusc.2008.08.077

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Molybdenum-doped indium oxide films of various thicknesses were deposited on quartz substrate by pulsed laser deposition technique. The effect of thickness on structural, optical, and electrical properties was studied. X-ray diffraction studied revealed that all the films are highly oriented along (2 2 2) direction. It is observed that film crystallinity increases with thickness. These films are highly transparent (82 - 96%) in visible region. Atomic force microscopy analysis shows that the films are very smooth with root mean square surface roughness of 0.95 nm for 10 nm thick film. It is observed that resistivity of the films decreases from 1.05 x 10 (4)Omega cm to 6.06 x 10 x 5 Omega cm, while mobility increases from 172 cm(2)/Vs to 263 cm(2)/Vs with increases in film thickness from 10 nm to 125 nm, respectively. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：3046 / 3048

页数：3

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