Influence of target to substrate spacing on the properties of ITO thin films

被引：60

作者：

Antony, A ^{[1
]}

Nisha, M ^{[1
]}

Manoj, R ^{[1
]}

Jayaraj, MK ^{[1
]}

机构：

[1] Cochin Univ Sci & Technol, Dept Phys, Optoelect Device Lab, Cochin 682022, Kerala, India

来源：

APPLIED SURFACE SCIENCE | 2004年 / 225卷 / 1-4期

关键词：

indium tin oxide; RF magnetron sputtering; annealing;

D O I：

10.1016/j.apsusc.2003.10.017

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Indium tin oxide thin films were deposited at room temperature on glass substrates by RF magnetron sputtering. The structural, electrical and optical properties of the films showed a dependence on target to substrate spacing and annealing temperature. Films deposited with a target to substrate spacing of 4 cm showed the lowest resistivity of 3.07 x 10(-3) Omega cm, and maximum band gap. of 3.89 eV on annealing at a temperature of 250 degreesC under high vacuum for 1 h. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：294 / 301

页数：8

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