POSTDEPOSITION ANNEALING INFLUENCE ON SPUTTERED INDIUM TIN OXIDE FILM CHARACTERISTICS

被引：50

作者：

HIGUCHI, M ^{[1
]}

UEKUSA, S ^{[1
]}

NAKANO, R ^{[1
]}

YOKOGAWA, K ^{[1
]}

机构：

[1] TOSHIBA CO LTD,MFG ENGN RES CTR,ISOGO KU,YOKOHAMA,KANAGAWA 235,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 1A期

关键词：

ITO; SPUTTERING; THIN FILMS; ANNEALING; RESISTIVITY; CARRIER CONCENTRATION; HALL MOBILITY; TRANSMITTANCE; CRYSTALLINITY; XRD; SURFACE TOPOGRAPHY;

D O I：

10.1143/JJAP.33.302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of postdeposition annealing on sputtered indium tin oxide (ITO) film characteristics were investigated. The annealing experiments were carried out in air or vacuum atmosphere. Both air and vacuum annealing decreased the resistivity up to heat treatment of 200 degrees C. Over 300 degrees C treatment, air annealing increased resistivity whereas vacuum annealing decreased it. It was clarified that the resistivity depended on the carrier concentration. The lowest resistivity attained was 1.3 x 10(-4) Omega(.)cm, with film deposited on a 250 degrees C heated substrate and annealed in vacuum atmosphere at 300 degrees C. Transmittance was improved in both air and vacuum annealing. In air and vacuum annealing, crystallinity improved with increasing annealing temperature. The surface topography showed no changes with air or vacuum annealing.

引用

页码：302 / 306

页数：5

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