Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion

被引：54

作者：

Naganawa, Miki ^{[1
]}

Shimizu, Yasuo ^{[1
]}

Uematsu, Masashi ^{[1
]}

Itoh, Kohei M. ^{[1
]}

Sawano, Kentarou ^{[2
]}

Shiraki, Yasuhiro ^{[2
]}

Haller, Eugene E. ^{[3
]}

机构：

[1] Keio Univ, Dept Appl Phys & Physicoinformat, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan

[2] Musashi Inst Technol, Adv Res Labs, Res Ctr Silicon Nanosci, Setagaya Ku, Tokyo 1580082, Japan

[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 19期

关键词：

carrier density; Fermi level; germanium; ion implantation; point defects; self-diffusion; vacancies (crystal);

D O I：

10.1063/1.3025892

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diffusion of germanium (Ge) and arsenic (As) has been investigated simultaneously using As-implanted Ge isotope superlattices. No transient enhanced diffusion of As that could have arisen by the implantation damage is observed. A quadratic dependence of the Ge self-diffusion on the carrier concentration due to the Fermi level effect is observed. A precise reproduction of the Ge and As diffusion profiles by a numerical simulator lets us conclude that doubly negatively charged vacancies are the dominant point defects responsible for more than 95% of the self-diffusion in intrinsic Ge and this fraction increases even further in n-type Ge.

引用

页数：3

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