Polarization imprint in ordered arrays of epitaxial ferroelectric nanostructures

被引：44

作者：

Ma, WH ^{[1
]}

Hesse, D ^{[1
]}

机构：

[1] Max Planck Inst Mikrostrukturphys, D-06120 Halle Saale, Saale, Germany

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 15期

关键词：

D O I：

10.1063/1.1703835

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sub 50-nm-high BaTiO3 epitaxial nanostructures were fabricated into well-ordered arrays on SrTiO3:Nb (001) single-crystal substrates using pulsed laser deposition through monolayer masks of monodisperse latex spheres (1 or 0.5 mum) and postdeposition annealing. Imprint was investigated in nanostructures of various dimensions using piezoresponse force microscopy. Piezoresponse domain imaging revealed a preferential downward prepolarization state for the as-prepared nanostructures, and consistently piezoresponse hysteresis loops exhibited negative polarization offsets. The offsets are suggested to be due to locked nonswitchable domains in an interface near region with a thickness of 7-14 nm. (C) 2004 American Institute of Physics.

引用

页码：2871 / 2873

页数：3

共 15 条

[1] Patterning and switching of nanosize ferroelectric memory cells [J].

Alexe, M ;

Harnagea, C ;

Hesse, D ;

Gösele, U .

APPLIED PHYSICS LETTERS, 1999, 75 (12) :1793-1795

[2] Polarization imprint and size effects in mesoscopic ferroelectric structures [J].

Alexe, M ;

Harnagea, C ;

Hesse, D ;

Gösele, U .

APPLIED PHYSICS LETTERS, 2001, 79 (02) :242-244

[3] The physics of ferroelectric memories [J].

Auciello, O ;

Scott, JF ;

Ramesh, R .

PHYSICS TODAY, 1998, 51 (07) :22-27

[4] Size effect in mesoscopic epitaxial ferroelectric structures:: Increase of piezoelectric response with decreasing feature size [J].

Bühlmann, S ;

Dwir, B ;

Baborowski, J ;

Muralt, P .

APPLIED PHYSICS LETTERS, 2002, 80 (17) :3195-3197

[5] Scaling of ferroelectric properties in thin films [J].

Ganpule, CS ;

Stanishevsky, A ;

Su, Q ;

Aggarwal, S ;

Melngailis, J ;

Williams, E ;

Ramesh, R .

APPLIED PHYSICS LETTERS, 1999, 75 (03) :409-411

[6] Mechanical stress effect on imprint behavior of integrated ferroelectric capacitors [J].

Gruverman, A ;

Rodriguez, BJ ;

Kingon, AI ;

Nemanich, RJ ;

Tagantsev, AK ;

Cross, JS ;

Tsukada, M .

APPLIED PHYSICS LETTERS, 2003, 83 (04) :728-730

[7] Spatial inhomogeneity of imprint and switching behavior in ferroelectric capacitors [J].

Gruverman, A ;

Rodriguez, BJ ;

Kingon, AI ;

Nemanich, RJ ;

Cross, JS ;

Tsukada, M .

APPLIED PHYSICS LETTERS, 2003, 82 (18) :3071-3073

[8] Imaging and control of domain structures in ferroelectric thin films via scanning force microscopy [J].

Gruverman, A ;

Auciello, O ;

Tokumoto, H .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1998, 28 :101-123

[9]

Lee J, 1996, APPL PHYS LETT, V68, P484, DOI 10.1063/1.116421

[10] Well-ordered arrays of pyramid-shaped ferroelectric BaTiO3 nanostructures [J].

Ma, WH ;

Harnagea, C ;

Hesse, D ;

Gösele, U .

APPLIED PHYSICS LETTERS, 2003, 83 (18) :3770-3772

← 1 2 →