Programmable Resistance Switching in Nanoscale Two-Terminal Devices

被引：249

作者：

Jo, Sung Hyun ^{[1
]}

Kim, Kuk-Hwan ^{[1
]}

Lu, Wei ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

来源：

NANO LETTERS | 2009年 / 9卷 / 01期

基金：

美国国家科学基金会;

关键词：

MEMORY; ARCHITECTURE; ELECTRONICS; NANODEVICES; MEMRISTOR; CIRCUITS;

D O I：

10.1021/nl803669s

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We show that in nanoscale two-terminal resistive switches the resistance switching can be dominated by the formation of a single conductive filament. The probabilistic filament formation process strongly affects the device operation principle, and can be programmed to facilitate new functionalities such as multibit switching with partially formed filaments. In addition, the nanoscale switches exhibit excellent performance metrics making them well suited for memory or logic operations using conventional or emerging hybrid nano/CMOS architectures.

引用

页码：496 / 500

页数：5

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