Alloying effects in self-assembled InAs InP dots

被引：19

作者：

Brault, J

Gendry, M

Grenet, G

Hollinger, G

Desieres, Y

Benyattou, T

机构：

[1] Ecole Cent Lyon, UMR CNRS 5512, LEAME, Elect Lab, F-69131 Ecully, France

[2] Inst Natl Sci Appl, UMR CNRS 5511, Phys Mat Lab, F-69621 Villeurbanne, France

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

关键词：

self-assembled dots; InAs InP; solid-source MBE; AFM; photoluminescence; alloying;

D O I：

10.1016/S0022-0248(99)00020-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have studied the influence of alloying induced chemical exchange reactions on the formation of self-assembled InAs dots prepared on InP and In0.52Al0.48 buffers lattice-matched to InP(001). Atomic force microscopy and low-temperature photoluminescence measurements have been used to characterize the dot properties. Strong differences in the islanding process are observed depending on the growth conditions and on the nature of the buffer layer. They are associated to variation in intermixing between the InAs deposit and the buffer layer. (C) 1999 Elsevier Science B.V. All rights reserved.

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页码：1176 / 1179

页数：4

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