Co-doped In2O3 thin films:: Room temperature ferromagnets

被引:66
作者
Hong, NH
Sakai, J
Huong, NT
Brizé, V
机构
[1] Univ Tours, CNRS, CEA, Lab LEMA,UMR 6157, F-37200 Tours, France
[2] JAIST, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan
关键词
ferromagnetic; semiconductors; thin films;
D O I
10.1016/j.jmmm.2005.09.010
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Laser-ablated Co-doped In2O3 thin films were fabricated under various growth conditions on R-cut Al2O3 and MgO substrates. All Co:In2O3 films are well-crystallized, single phase, and room temperature ferromagnetic. Co atoms were well substituted for In atoms, and their distribution is greatly uniform over the whole thickness of the films. Films grown at 550 degrees C showed the largest magnetic moment of about 0.5 mu(B)/Co, while films grown at higher temperatures have magnetic moments of one order smaller. The observed ferromagnetism above room temperature in Co:In2O3 thin films has confirmed that doping few percent of magnetic elements such as Co into In2O3 could result in a promising magnetic material. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:228 / 231
页数:4
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