Breakdown in millimeter-wave power InPHEMT's: A comparison with GaAsPHEMT's

被引：33

作者：

del Alamo, JA ^{[1
]}

Somerville, MH ^{[1
]}

机构：

[1] MIT, Cambridge, MA 02139 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1999年 / 34卷 / 09期

基金：

美国国家科学基金会;

关键词：

breakdown voltage; high electron mobility transistor (HEMT); InGaAs; power; pseudomorphic HEMT (PHEMT);

D O I：

10.1109/4.782077

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In spite of their outstanding transport characteristics, InP high-electron mobility transistors (HEMT's) deliver lower output power than GaAs pseudomorphic HEMT's (PHEMT's) throughout most of the millimeter-wave regime, However, the superior power-added efficiency of InP HEMT's when compared with GaAs PHEMT's makes this technology attractive for many applications. The reason for the relatively inferior power output of InP HEMT's lies in their comparatively small off-state and on-state breakdown voltages, This paper reviews the state of knowledge regarding the physics of breakdown voltage in InP HEMT's, placing it in contrast with GaAs PHEMT's, It also presents current understanding regarding burnout, a closely related phenomenon. This paper concludes by discussing strategies for improving the breakdown voltage and the power output of InP HEMT's.

引用

页码：1204 / 1211

页数：8

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