Resistivity and oxygen content of indium tin oxide films deposited at room temperature by pulsed-laser ablation

被引：47

作者：

Wu, Y ^{[1
]}

Marée, CHM

Haglund, RF

Hamilton, JD

Paliza, MAM

Huang, MB

Feldman, LC

Weller, RA

机构：

[1] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

[2] Vanderbilt Univ, Dept Elect & Comp Engn, Nashville, TN 37235 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 02期

关键词：

D O I：

10.1063/1.370864

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transparent, conductive indium tin oxide (ITO) films were fabricated by pulsed-laser deposition on substrates held at room temperature. We investigated the relationship between electrical/optical properties of the films and the material stoichiometry, measured by Rutherford backscattering. The lowest resistivity films (similar to 4x10(-4) Omega cm) have excessive oxygen compared with the stoichiometric composition ITO. After annealing in argon at 400 degrees C for 1.5 h, the oxygen-to-(indium+tin) ratio approaches the stoichiometric composition of 1.5 and resistivities of annealed samples are similar to 2.5x10(-4) Omega cm. The room-temperature ITO resistivity dependence on chamber gas pressure is explained in terms of a gas-dynamic model and oxygen content of the film. (C) 1999 American Institute of Physics. [S0021-8979(99)00114-0].

引用

页码：991 / 994

页数：4

共 11 条

[1] PREPARATION OF CONDUCTING AND TRANSPARENT THIN-FILMS OF TIN-DOPED INDIUM OXIDE BY MAGNETRON SPUTTERING [J].

BUCHANAN, M ;

WEBB, JB ;

WILLIAMS, DF .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :213-215

[2]

Bulovic V, 1997, APPL PHYS LETT, V70, P2954, DOI 10.1063/1.119260

[3] TRANSPARENT CONDUCTORS - A STATUS REVIEW [J].

CHOPRA, KL ;

MAJOR, S ;

PANDYA, DK .

THIN SOLID FILMS, 1983, 102 (01) :1-46

[4] CHEMICAL VAPOR-DEPOSITION OF TRANSPARENT ELECTRICALLY CONDUCTING LAYERS OF INDIUM OXIDE DOPED WITH TIN [J].

KANE, J ;

SCHWEIZER, HP ;

KERN, W .

THIN SOLID FILMS, 1975, 29 (01) :155-163

[5]

LOWNDES DH, 1998, LASER ABLATION DESOR, P551

[6] ELECTRICAL-PROPERTIES OF SNO2 FILMS ON VARIOUS GLASS SUBSTRATES [J].

MIZUHASHI, M .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 38-9 (MAY-) :329-334

[7] STUDY OF THE EFFECT OF SN DOPING ON THE ELECTRONIC TRANSPORT-PROPERTIES OF THIN-FILM INDIUM OXIDE [J].

SHIGESATO, Y ;

PAINE, DC .

APPLIED PHYSICS LETTERS, 1993, 62 (11) :1268-1270

[8] PREPARATION AND CHARACTERIZATION OF RF SPUTTERED INDIUM TIN OXIDE-FILMS [J].

SREENIVAS, K ;

RAO, TS ;

MANSINGH, A ;

CHANDRA, S .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :384-392

[9]

Tahar RBH, 1998, J APPL PHYS, V83, P2631, DOI 10.1063/1.367025

[10] Dynamics of plume propagation and splitting during pulsed-laser ablation [J].

Wood, RF ;

Chen, KR ;

Leboeuf, JN ;

Puretzky, AA ;

Geohegan, DB .

PHYSICAL REVIEW LETTERS, 1997, 79 (08) :1571-1574

← 1 2 →