PREPARATION AND CHARACTERIZATION OF RF SPUTTERED INDIUM TIN OXIDE-FILMS

被引：136

作者：

SREENIVAS, K ^{[1
]}

RAO, TS ^{[1
]}

MANSINGH, A ^{[1
]}

CHANDRA, S ^{[1
]}

机构：

[1] NATL PHYS LAB, NEW DELHI 110012, INDIA

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 02期

关键词：

D O I：

10.1063/1.335481

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：384 / 392

页数：9

共 41 条

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[7] X-RAY PHOTOEMISSION SPECTROSCOPY STUDIES OF SN-DOPED INDIUM-OXIDE FILMS [J].

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[8] TIN-DOPED IN2O3 FILMS DEPOSITED BY RF-SPUTTERING [J].

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[9] STUDY OF SNO2 THIN-FILMS FORMED BY SPUTTERING AND BY ANODIZING [J].

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[10]

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