Improvement in carrier transport properties by mild thermal annealing of PbS quantum dot solar cells

被引：47

作者：

Gao, Jianbo ^{[1
]}

Jeong, Sohee ^{[2
]}

Lin, Feng ^{[1
]}

Erslev, Peter T. ^{[1
]}

Semonin, Octavi E. ^{[1
,3
]}

Luther, Joseph M. ^{[1
]}

Beard, Matthew C. ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] Korea Inst Machinery & Mat, Nanomech Syst Res Div, Taejon 305343, South Korea

[3] Univ Colorado, Boulder, CO 80309 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 04期

关键词：

MULTIPLE EXCITON GENERATION; NANOCRYSTAL; EFFICIENCY; LAYER;

D O I：

10.1063/1.4789434

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the effect of post-deposition thermal annealing in the preparation of PbS quantum dot (QD) solar cells. We find an optimal annealing temperature that improves the power conversion efficiency by a factor of 1.5 for different sized QDs with bandgaps of 1.65 and 1.27 eV. We examined the onset of the photocurrent response and correlated that with domain grain growth and find that annealing the PbS QD array at 120 degrees C causes little change in the PbS QD size, bandgap, and open-circuit voltage and yet leads to an increase in the carrier transport as realized by an improved current response. We also find a decrease in the activation energy of a shallow trap, which also likely contributes to the improvement in the solar cell efficiency. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789434]

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页数：5

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