Planarization of epitaxial GaAs overgrowth over tungsten wires

被引：22

作者：

Wernersson, LE ^{[1
]}

Georgsson, K ^{[1
]}

Litwin, A ^{[1
]}

Samuelson, L ^{[1
]}

Seifert, W ^{[1
]}

机构：

[1] ERICSSON COMPONENTS AB,KISTA,SWEDEN

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 01期

关键词：

D O I：

10.1063/1.360857

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on thin GaAs epitaxial overgrowth over tungsten wires. The aim of the study is to overgrow the grating without the formation of voids above the tungsten wires and to investigate the planarization of the growth front over the grating. It is established that the most important factors for rapid planarization of the overgrowth for given epitaxial conditions are the crystallographic orientation of the grating, the grating period, and the ratio of the growth rates for the different facets formed in the growth front. For a 300 nm period grating and a metal width of 100 nm, a planarized growth front is demonstrated after 200 nm of growth. (C) 1996 American Institute of Physics.

引用

页码：500 / 503

页数：4

共 6 条

[1] LATERAL GAAS GROWTH OVER TUNGSTEN GRATINGS ON (001) GAAS SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION AND APPLICATIONS TO VERTICAL FIELD-EFFECT TRANSISTORS [J].