GAAS METALORGANIC VAPOR-PHASE EPITAXIAL OVERGROWTH OVER NM-SIZED TUNGSTEN WIRES

被引：8

作者：

WERNERSSON, LE

GEORGSSON, K

LITWIN, A

SAMUELSON, L

SEIFERT, W

机构：

[1] LUND UNIV,NANOMETER STRUCT CONSORTIUM,DEPT SOLID STATE PHYS,S-22100 LUND,SWEDEN

[2] ERICSSON COMPONENTS AB,S-16481 KISTA,SWEDEN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 8B期

关键词：

EPITAXIAL OVERGROWTH; MOVPE; PET; SCHOTTKY DIODE; W/GAAS;

D O I：

10.1143/JJAP.34.4414

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial overgrowth of GaAs over nanometer-sized tungsten patterns is studied experimentally. The relationships between the quality of the overgrowth and geometrical parameters, such as crystallographic orientation, metal width, metal thickness, and grating period, are investigated The overgrown structures are characterized using a scanning electron microscope at top surfaces and at cleaved edges, and by I-V measurements of Schottky diodes formed between the metal grid and the overgrown GaAs. It is established that it is possible to obtain a high-quality overgrowth layer with a completely planarized growth front within 200 nm of growth.

引用

页码：4414 / 4416

页数：3

共 8 条

[1] LATERAL GAAS GROWTH OVER TUNGSTEN GRATINGS ON (001) GAAS SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION AND APPLICATIONS TO VERTICAL FIELD-EFFECT TRANSISTORS [J].