SCHOTTKY-BARRIER DEGRADATION OF THE W/GAAS SYSTEM AFTER HIGH-TEMPERATURE ANNEALING

被引:42
作者
YU, KM [1 ]
CHEUNG, SK [1 ]
SANDS, T [1 ]
JAKLEVIC, JM [1 ]
CHEUNG, NW [1 ]
HALLER, EE [1 ]
机构
[1] UNIV CALIF BERKELEY,BERKELEY,CA 94720
关键词
D O I
10.1063/1.337744
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:3235 / 3242
页数:8
相关论文
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