Gain limiting processes in Er-doped Si nanocrystal waveguides in SiO2

Erbium-doped Si nanocrystal based optical waveguides were formed by Er and Si ion implantation into SiO2. Optical images of the waveguide output facet show a single, well-confined optical mode. Transmission measurements reveal a clear Er related absorption of 2.7 dB/cm at 1.532 mum, corresponding to a cross section of 8x10(-20) cm(2). The Si nanocrystals act as sensitizers for Er but under high doping conditions (similar to 50 Er ions per nanocrystals) no pump-induced change in the Er related absorption is observed under optical pumping (lambda =458 nm), which is ascribed to an Auger quenching effect. For very high pump powers, a broad absorption feature is observed, attributed to free carrier absorption. (C) 2002 American Institute of Physics.