Laser pulser for a time-of-flight laser radar

被引:41
作者
Kilpela, A
Kostamovaara, J
机构
[1] University of Oulu, Electronics Laboratory, Linnanmas
关键词
D O I
10.1063/1.1148133
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A laser pulser for a pulsed time-of-flight laser radar is presented. The pulser is constructed using a single avalanche transistor in order to keep the schematic simple and to avoid the problems encountered when connecting several avalanche transistors in parallel. The schematic of the laser pulser was optimized and it was noticed that the optical peak pulse power of the laser can be increased significantly by adding a parallel capacitor to the laser. The measured increase of the optical power was up to 26%. The simulations show that the parallel capacitor and also the serial inductances of the components in the laser pulser play a significant role in adjusting the shape of the current pulse. In order to find the transistor, which gives the highest current, the properties of several transistor types were compared. It was noticed that there can be a great difference between the avalanche properties of a group of transistors even if they are of the same type. (C) 1997 American Institute of Physics.
引用
收藏
页码:2253 / 2258
页数:6
相关论文
共 18 条
[1]   INEXPENSIVE LASER DIODE PULSE-GENERATOR FOR OPTICAL-WAVEGUIDE STUDIES [J].
ANDREWS, JR .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1974, 45 (01) :22-24
[2]   A FAST RISETIME AVALANCHE TRANSISTOR PULSE GENERATOR FOR DRIVING INJECTION LASERS [J].
HANSEN, JP ;
SCHMIDT, WA .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (02) :216-&
[3]   MODELING OF NARROW-BASE BIPOLAR-TRANSISTORS INCLUDING VARIABLE-BASE-CHARGE AND AVALANCHE EFFECTS [J].
HEBERT, F ;
ROULSTON, DJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) :2323-2328
[4]  
HERDEN W, 1973, IEEE J SOLID STATE C, V9, P247
[5]   APPLICATION OF AVALANCHE TRANSISTORS TO CIRCUITS WITH A LONG MEAN TIME TO FAILURE [J].
HERDEN, WB .
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1976, 25 (02) :152-160
[6]   AN AVALANCHE MULTIPLICATION MODEL FOR BIPOLAR-TRANSISTORS [J].
LIOU, JJ ;
YUAN, JS .
SOLID-STATE ELECTRONICS, 1990, 33 (01) :35-38
[7]  
MAATTA K, 1993, APPL OPTICS, V27, P5334
[8]   ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J].
MCKAY, KG ;
MCAFEE, KB .
PHYSICAL REVIEW, 1953, 91 (05) :1079-1084
[9]  
MITSUSHIMA Y, 1967, IEEE T ELECTRON DEV, V14, P146
[10]   MULTIPLICATION IN COLLECTOR JUNCTIONS OF SILICON N-P-N AND P-N-P TRANSISTORS [J].
MOLL, JL ;
SU, JL ;
WANG, ACM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (05) :420-&