Study of the irradiation damage in SiC by ion channeling

被引：5

作者：

Kokkoris, M ^{[1
]}

Kossionides, S

Kyriakis, A

Zachariadou, K

Fanourakis, G

Vlastou, R

Paradellis, T

机构：

[1] NCSR Demokritos, Inst Nucl Phys, Lab Mat Anal, GR-15310 Athens, Greece

[2] Natl Tech Univ Athens, Dept Phys, GR-15780 Athens, Greece

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2002年 / 188卷

关键词：

backscattering; channeling; SiC crystal; lithium; Lely; RBS;

D O I：

10.1016/S0168-583X(01)01022-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The importance of silicon carbide as a wide band gap semiconductor is widely accepted and well documented. Its excellent physical properties (chemical inertness, high-temperature strength, low thermal expansion, extreme hardness) make it the most promising substitute for traditional semiconductors. especially when high-temperature, high-voltage power. and high-frequency devices are concerned. In the present work. the gradual amorphization of a SiC Lely (21 R) crystal hen irradiated with 8 MeV Li-7 ions in a random direction up to a maximum dose of approximately 1 x 10(16) particles/cm(2). is being Studied. using the progressive change of channeling parameters for different depths. The results refer to the energy region of similar to1 MeV/nucleon. and an attempt is made in order to explain the peculiarities of the experimental spectra and the mechanism of defect production in SiC. As in previous studies. a change in color was observed after irradiation in the random mode, indicating that the problem of irradiation damage in SiC caused by light ion be beams needs further investigation. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：78 / 83

页数：6

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