Dielectric relaxation and charge transport mechanisms in (Ba,Sr)TiO3 thin films

被引：8

作者：

Steinlesberger, G ^{[1
]}

Reisinger, H

Bachhofer, H

Schroeder, H

Werner, WSM

机构：

[1] Infineon Technol AG, D-81730 Munich, Germany

[2] Forschungszentrum Julich, IFF, D-52425 Julich, Germany

[3] Vienna Univ Technol, Inst Allgemeine Phys, A-1040 Vienna, Austria

来源：

INTEGRATED FERROELECTRICS | 2001年 / 38卷 / 1-4期

关键词：

BST; dielectric relaxation; leakage current;

D O I：

10.1080/10584580108016938

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical properties of barium strontium titanate (BST) thin films were investigated. The transient relaxation current was measured at various temperatures for different BST thicknesses and was found to obey the Curie-von-Schweidler law. A bulk related relaxation model involving hopping of charge carriers was used to explain these results. In addition, the frequency dependence of the dielectric loss was measured and compared with the transient relaxation current. To interpret the leakage data, the temperature and field dependence were analyzed qualitatively and quantitatively. An interfacial layer with reduced static dielectric constant enhances the electric field near the electrodes. For temperatures lower than 400 K and electric fields higher than 3 MVcm(-1) charge transport is dominated by Fowler-Nordheim tunneling.

引用

页码：893 / 902

页数：10

共 19 条

[1] Dielectric relaxation of Ba0.7Sr0.3TiO3 thin films from 1 mHz to 20 GHz [J].