Atomic Resolution Imaging of Grain Boundary Defects in Monolayer Chemical Vapor Deposition-Grown Hexagonal Boron Nitride

被引：215

作者：

Gibb, Ashley L. ^{[1
,2
,3
]}

Alem, Nasim ^{[2
,3
]}

Chen, Jian-Hao ^{[2
,3
]}

Erickson, Kristopher J. ^{[1
,2
,3
]}

Ciston, Jim ^{[4
]}

Gautam, Abhay ^{[4
]}

Linck, Martin ^{[4
]}

Zettl, Alex ^{[2
,3
]}

机构：

[1] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

[4] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Natl Ctr Electron Microscopy, Berkeley, CA 94720 USA

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2013年 / 135卷 / 18期

关键词：

GRAPHENE; TRANSPORT; PENTAGON;

D O I：

10.1021/ja400637n

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Grain boundaries are observed and characterized in chemical vapor deposition-grown sheets of hexagonal boron nitride (h-BN) via ultra-high-resolution transmission electron microscopy at elevated temperature. Five- and seven-fold defects are readily observed along the grain boundary. Dynamics of strained regions and grain boundary defects are resolved. The defect structures and the resulting out-of-plane warping are consistent with recent theoretical model predictions for grain boundaries in h-BN.

引用

页码：6758 / 6761

页数：4

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