Material and process related limitations of InP HEMT performance

被引：2

作者：

VanHove, M

Finders, J

vanderZanden, K

DeRaedt, W

VanRossum, M

Baeyens, Y

Schreurs, D

Menozzi, R

机构：

[1] KATHOLIEKE UNIV LEUVEN, DIV ESAT TELEMIC, B-3001 LOUVAIN, BELGIUM

[2] UNIV PARMA, DIPARTIMENTO INGN INFORMAZ, I-43100 PARMA, ITALY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 44卷 / 1-3期

关键词：

high electron mobility transistors; InP substrates; limitations;

D O I：

10.1016/S0921-5107(96)01777-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We review the status and discuss the limitations of the device and monolithic microwave integrated circuit technology for lattice-matched and pseudomorphic HEMTs grown on InP substrates. Some technological aspects will be discussed including layer growth, ohmic contact fabrication, electron-beam defined mushroom-shaped gates, uniformity of gate-recess etching, buried gate contacts and the effect of silicon nitride passivation on the device performance. Finally some device lifetime issues are discussed, including preliminary results of low-frequency dispersion measurements and a study of hot electron degradation. (C) 1997 Elsevier Science S.A.

引用

页码：311 / 315

页数：5

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