Giant Fluctuations and Gate Control of the g-Factor in InAs Nanowire Quantum Dots

被引：95

作者：

Csonka, S. ^{[1
]}

Hofstetter, L. ^{[1
]}

Freitag, F. ^{[1
]}

Oberholzer, S. ^{[1
]}

Schoenenberger, C. ^{[1
]}

Jespersen, T. S. ^{[2
]}

Aagesen, M. ^{[2
]}

Nygard, J. ^{[2
]}

机构：

[1] Univ Basel, Dept Phys, CH-4056 Basel, Switzerland

[2] Univ Copenhagen, Niels Bohr Inst, Nanosci Ctr, DK-2100 Copenhagen, Denmark

来源：

NANO LETTERS | 2008年 / 8卷 / 11期

关键词：

D O I：

10.1021/nl802418w

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We study the g-factor of discrete electron states in InAs nanowire based quantum dots. The g values are determined from the magnetic field splitting of the zero bias anomaly due to the spin 1/2 Kondo effect. Unlike to previous studies based on 2DEG quantum dots, the g-factors of neighboring electron states show a surprisingly large fluctuation: g can scatter between 2 and 18. Furthermore electric gate tunability of the g-factor is demonstrated. © 2008 American Chemical Society.

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页码：3932 / 3935

页数：4

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