High channel mobility in inversion layers of 4H-SiC MOSFET's by utilizing (11(2)over-bar0) face

被引：206

作者：

Yano, H ^{[1
]}

Hirao, T

Kimoto, T

Matsunami, H

Asano, K

Sugawara, Y

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto, Japan

[2] Kansai Elect Power Co, Tech Res Ctr, Amagasaki, Hyogo, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 12期

关键词：

anisotropy; channel mobility; (11(2)over-bar0); 4H-SIC; MOSFET's; threshold voltage;

D O I：

10.1109/55.806101

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A dramatic improvement of inversion channel mobility in 4H-SiC MOSFET's was successfully achieved by utilizing the (11 $(2) over bar $ 0) face: 17 times higher (95.9 cm(2)/Vs) than that on the conventional (0001) Si-face (5.59 cm2/Vs). A law threshold voltage of MOSPET's on the (11 $(2) over bar $ 0) face indicates that the (11 $(2) over bar $ 0) MOS interface has fewer negative charges than the (0001) MOS interface. Small anisotropy of channel mobility in 4H-SiC MOSFET's (mu([1 $(1) over bar $ 00])/mu([0001]) = 0.85) reflects the small anisotropy in bulk electron mobility.

引用

页码：611 / 613

页数：3

共 15 条

[1] 1.1 kV 4H-SiC power UMOSFET's [J].