Comment on "Ab initio calculation of excitonic effects in the optical spectra of semiconductors"

被引：20

作者：

Cardona, M ^{[1
]}

Lastras-Martínez, LF

Aspnes, DE

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[2] N Carolina State Univ, Raleigh, NC 27695 USA

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 83卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.83.3970

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A Comment on the Letter by Stefan Albrecht, Lucia Reining, Rodolfo Del Sole, and Giovanni Onida, Phys. Rev. Lett. 80, 4510 (1998). The authors of the Letter offer a Reply. © 1999 The American Physical Society.

引用

页码：3970 / 3970

页数：1

共 12 条

[1] Ab initio calculation of excitonic effects in the optical spectra of semiconductors
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[J]. PHYSICAL REVIEW LETTERS, 1998, 80 (20) : 4510 - 4513
[2] The GW method
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[3] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV
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[5] Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigation
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[6] Jellison G. E. Jr., 1992, Optical Materials, V1, P41, DOI 10.1016/0925-3467(92)90015-F
[7] Lastras-Martínez LF, 1998, PHYS STATUS SOLIDI A, V170, P317, DOI 10.1002/(SICI)1521-396X(199812)170:2<317::AID-PSSA317>3.0.CO
[8] 2-V
[9] INTERBAND CRITICAL-POINTS OF GAAS AND THEIR TEMPERATURE-DEPENDENCE
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[10] TEMPERATURE-DEPENDENCE OF THE DIELECTRIC FUNCTION AND INTERBAND CRITICAL-POINTS IN SILICON
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[J]. PHYSICAL REVIEW B, 1987, 36 (09): : 4821 - 4830

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