In situ epitaxial growth of TiO2 on RuO2 nanorods with reactive sputtering -: art. no. 043115

被引：26

作者：

Cheng, KW ^{[1
]}

Lin, YT ^{[1
]}

Chen, CY ^{[1
]}

Hsiung, CP ^{[1
]}

Gan, JY ^{[1
]}

Yeh, JW ^{[1
]}

Hsieh, CH ^{[1
]}

Chou, LJ ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30043, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 04期

关键词：

D O I：

10.1063/1.2166481

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, TiO2 deposition on RuO2 nanorods with reactive sputtering was studied. The TiO2 deposition was performed in situ after the RuO2 nanorod deposition at the same substrate temperature of 450 degrees C. The morphology examination and structure analysis have indicated a uniform and pure rutile TiO2 deposition on RuO2 nanorods. High-resolution transmission electron microscopy images also revealed an epitaxial growth of TiO2 on RuO2 nanorods. Such a low-temperature fabrication technique for one-dimensional (1D) heteronanostructure may apply to other functional materials. Since RuO2 is a good electric conductor, 1D heteronanostructures made from RuO2 nanorods are expected to exhibit enhanced functionality particularly in electrical and electrochemical applications.

引用

页码：1 / 3

页数：3

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