Crystal growth and structure of the semiconductor Cu2SnSe3

被引：57

作者：

Marcano, G

de Chalbaud, LM

Rincón, C ^{[1
]}

Pérez, GS

机构：

[1] Univ Los Andes, Fac Ciencias, Dept Fis, Ctr Estudios Semicond, Merida 5101, Venezuela

[2] Univ Los Andes, Fac Ciencias, Dept Fis, Lab Magnetismo Solidos, Merida 5101, Venezuela

来源：

MATERIALS LETTERS | 2002年 / 53卷 / 03期

关键词：

ternary semiconductor; Cu2SnSe3 crystal growth; differential thermal analysis; X-ray diffraction; crystal structure;

D O I：

10.1016/S0167-577X(01)00466-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bulk samples of Cu2SnSe3 prepared by the vertical Bridgman-Stockbarger technique were studied by energy dispersive X-ray spectroscopy (EDX), X-ray powder diffraction and differential thermal analysis (DTA). It is observed that the chemical compositions of the samples used in the study were close to the ideal value 2:1:3. It is also found that Cu2SnSe3 crystallizes in a monoclinic structure, space group Cc, with unit cell parameters a = 6.5936(1) Angstrom, b = 12.1593(4) Angstrom and c = 6.6084(3) Angstrom and beta = 108.56(2)degrees. A secondary phase of SnSe2 due to a eutectic reaction is also observed. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：151 / 154

页数：4

共 13 条

[1]

Berger L.T., 1969, TERNARY DIAMOND LIKE, P55

[2]

de Chalbaud LM, 1998, INST PHYS CONF SER, V152, P151

[3] Synthesis and single-crystal structural study of Cu2GeS3 [J].