Larmor beats and conduction electron g factors in InxGa1-xAs/GaAs quantum wells

被引：18

作者：

Malinowski, A ^{[1
]}

Guerrier, DJ ^{[1
]}

Traynor, NJ ^{[1
]}

Harley, RT ^{[1
]}

机构：

[1] Univ Southampton, Dept Phys & Astron, Southampton SO17 1BJ, Hants, England

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.60.7728

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report conduction electron g factors g(e) in strained layer InxGa1-xAs/GaAs quantum wells from time-resolved Larmor beats in reflection and cw Hanle luminescence depolarization. Samples had well widths from 3 to 20 nm and x = 0.11 +/- 0.02. The beat frequency gave \g(e)\ and nuclear Overhauser shift in the Hanle effect revealed its negative sign. The variation of g(e) with well width parallels that in GaAs/AlxGa1-xAs wells indicating the dominance of nonparabolicity of the bulk conduction band sampled at different electron confinement energies, with important, but weaker, expected effects of strain, quantum-well anisotropy, and barrier penetration. [S0163-1829(99)09135-3].

引用

页码：7728 / 7731

页数：4

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