Nanoscale dislocation patterning in PbTe/PbSe(001) lattice-mismatched heteroepitaxy

被引：45

作者：

Springholz, G ^{[1
]}

Wiesauer, K ^{[1
]}

机构：

[1] Johannes Kepler Univ, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 88卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.88.015507

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Dislocation patterning in PbTe on PbSe (001) heteroepitaxy is studied using scanning tunneling microscopy. It is shown that exceedingly regular square arrays of misfit dislocations are formed during strain relaxation. This is based on the existence of a homogeneous dislocation nucleation process, a high dislocation mobility within the interface, and an effective repulsive interaction between neighboring dislocations. Similar results are expected also for other highly mismatched heteroepitaxial systems.

引用

页码：4 / 155074

页数：4

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