Biaxial alignment of TiN films prepared by ion beam assisted deposition

The biaxial alignment of TiN on Si(111) films prepared by nitrogen ion beam assisted deposition at room temperature was studied. By reactive deposition within a nitrogen environment a preferred {111} orientation was obtained the growing TiN crystallites. In contrast, a nitrogen ion bombardment perpendicular to the surface of the substrate during deposition causes an {001} alignment of the crystallites. A 55 degrees ion beam incidence produces both {111}-orientation relative to the surface and {100}-orientation relative to the ion beam. This results in a totally fixed orientation of the crystallites. Simultaneous UV-light illumination during ion bombardment promotes a uniformly oriented growth. (C) 1996 American Institute of Physics.