Ferromagnetic III-Mn-V semiconductor multilayers: Manipulation of magnetic properties by proximity effects and interface design (invited)

被引：20

作者：

Furdyna, JK ^{[1
]}

Liu, X

Sasaki, Y

Potashnik, SJ

Schiffer, P

机构：

[1] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

[2] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

[3] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 10期

关键词：

D O I：

10.1063/1.1452643

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the degree to which magnetic properties of ferromagnetic (FM) III-Mn-V semiconductors can be modified by the proximity of other magnetic layers. This study was carried out on multilayers comprised of FM GaMnAs and either MnTe or ZnMnSe overlayers, both latter systems involving antiferromagnetic interactions between the Mn ions. The overlayers were grown directly adjacent to GaMnAs, or were separated from it by nonmagnetic layers (GaAs). We have observed that the presence of either MnTe or ZnMnSe overlayers leads to dramatic modifications of the coercive field of GaMnAs. In the case of GaMnAs/GaAs/MnTe multilayers the coercive field of GaMnAs could be modified by varying the thickness of the GaAs spacer. Additionally, in samples with both types of overlayers an increase in the Curie temperature was observed, as compared to "bare" GaMnAs. (C) 2002 American Institute of Physics.

引用

页码：7490 / 7495

页数：6

共 29 条

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