Static and dynamic thermal modeling of ICs

被引：34

作者：

Sabry, MN ^{[1
]}

机构：

[1] Mansoura Univ, Dept Mech Engn, Mansoura 35516, Egypt

来源：

MICROELECTRONICS JOURNAL | 1999年 / 30卷 / 11期

关键词：

thermal modeling; electro-thermal simulation; steady and transient regimes;

D O I：

10.1016/S0026-2692(99)00069-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

Thermal modeling of IC chips in view of coupled electro-thermal simulation, is investigated both for steady and transient regimes. This paper presents a methodology to efficiently obtain both the topology of an adequate reduced thermal model of the chip as well as parameter values in this model. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：1085 / 1091

页数：7

共 14 条

[1]

[Anonymous], P C INT EL PACK SOC

[2]

THETA-JC CHARACTERIZATION OF CHIP PACKAGES - JUSTIFICATION, LIMITATIONS, AND FUTURE [J].