A field emitter array monolithically integrated with a thin-film transistor on glass for display applications

被引：9

作者：

Gamo, H

Kanemaru, S

Itoh, J

机构：

[1] Toppan Printing Co Ltd, Elect Res Lab, Sugito, Saitama 3458508, Japan

[2] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED SURFACE SCIENCE | 1999年 / 146卷 / 1-4期

关键词：

electron sources; field emission; thin nm transistor; amorphous silicon; emission stability;

D O I：

10.1016/S0169-4332(99)00066-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have fabricated a field emitter array (FEA) monolithically integrated with a thin-film-transistor (TFT), called a TFT-FEA, on glass and characterized its emission properties. Fabrication of the TFT-FEA on glass was conducted through low-temperature processes of less than 350 degrees C. From experimental results, it was found that the emission current was well controlled by the TFT drain current and consequently became stable. Emission was also turned on/off by the TFT function at a low voltage of 3 V. With this TFT-FEA, very stable emission currents with fluctuations of less than 2% have been demonstrated. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：187 / 192

页数：6

共 8 条

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Betsui K., 1991, 4 INT VAC MICR C NAG, P26

[2] A field emitter array with an amorphous silicon thin-film transistor on glass [J].